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HX6408 Advanced Information
HX6408 512k x 8 STATIC RAM
The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell's radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V 0.3V power supply. Power consumption is typically <30 mW @ 1MHz in write mode, <14 mW @ 1MHz in read mode, and is less than 5 mW when in standby mode. Honeywell's enhanced RICMOSTM(Radiation Insensitive CMOS) SOI V technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOSTM V low power process is a SOI CMOS technology with an 80 A gate oxide and a minimum drawn feature size of 0.35 m. Additional features include tungsten via and contact plugs, Honeywell's proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.
FEATURES
Fabricated with RICMOSTM V Silicon On Insulator (SOI) 0.35 mm Process (Leff = 0.28 m) Total Dose 3x10 and 1X10 rad(SiO2) Neutron 1x10 cm
14 -2 5 6
No Latchup Read/Write Cycle Times 20 ns, (3.3 V), -55 to 125C Typical Operating Power (3.3 V) <14 mW @ 1MHz Read <30 mW @ 1MHz Write <5 mW Standby mode Asynchronous Operation CMOS Compatible I/O
Single Power Supply, 3.3 V 0.3 V Operating Range is -55C to +125C 36-Lead Flat Pack Package Optional Low Power Sleep Mode
Dynamic and Static Transient Upset 1x1010 rad(Si)/s (3.3 V) Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate 1x10-10 Upsets/bit-day (3.3 V)
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HX6408 Advanced Information
FUNCTIONAL DIAGRAM
36 LEAD FLAT PACK PINOUT
HX6408 Top View
Address Decoder
A0
1 2 3 4 5 6 7 8 9 10 11 12
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
(NSL) A18 A17 A16 A15 NOE D4 D5 VSS VDD D6 D7 A14 A13 A12 A11 A10 NAS
An
Memory Array
A1 A2 A3 A4
NWE Timing \ Control DQ(0:7) WE * CS NWE * CS
NCS D0 D1 VDD VSS D2 D3
NSL NCS
NOE
NWE 13
All controls must be enabled for signal to pass. # = number of buffers, Default = 1 1 = enabled Signal # Signal
A5 14 A6 15 A7 16 A8 17 A9 18
SIGNAL DEFINITIONS
A: 0-18 DQ: 0-7 NCS Address input pins, which select a particular eight-bit word within the memory array. Bidirectional data pins, which serve as data outputs during a read operation and as data inputs during a write operation. Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state. If this signal is not used it must be connected to VSS. Negative write enable, when at a low level activates a write operation and holds the data output drivers in a high impedance state. When at a high level NWE allows normal read operation. Negative output enable, when at a high level holds the data output drivers in a high impedance state. When at a low level, the data output driver state is defined by NCS, NWE and NSL. This signal is asynchronous. Not sleep, when at a high level allows normal operation. When at a low level NSL forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all the input buffers except the NCS and NOE input buffers. If this signal is not used it must be connected to VDD. This signal is asynchronous. The HX6408 may be ordered without the sleep mode option and pin 36 is then a NC.
NWE NOE
NSL
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HX6408 Advanced Information
TRUTH TABLE
NCS L L H X NSL H H X L NWE H L X X NOE L X X X Mode Read Write Deselected Sleep DQ Data Out Data In High Z High Z
X: VI = VIH or VIL, NOE=H: High Z output state maintained for NCS=X, NWE=X
RADIATION
Total Ionizing Radiation Dose The SRAM will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications. Total dose hardness is assured by wafer level testing of process monitor transistors and RAM product using 10 KeV X-ray. Transistor gate threshold shift correlations have been made between 10 KeV X-rays applied at a dose rate of 1x105 rad(SiO2)/min at T= 25C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. Transient Pulse Ionizing Radiation The SRAM is capable of writing, reading, and retaining stored data during and after exposure to a transient ionizing radiation pulse, up to the specified transient dose rate upset specification, when applied under recommended operating conditions. It is recommended to provide external power supply decoupling capacitors to maintain VDD voltage levels during transient events. The SRAM will meet any functional or electrical specification after exposure to a radiation pulse up to the transient dose rate survivability specification, when applied under recommended operating conditions. Note that the current conducted during the pulse by the RAM inputs, outputs, and power supply may significantly exceed the normal operating levels. The application design must accommodate these effects. Neutron Radiation The SRAM will meet any functional or timing specification after exposure to the specified neutron fluence under recommended operating or storage conditions. This assumes an equivalent neutron energy of 1 MeV. Soft Error Rate The SRAM is capable of meeting the specified Soft Error Rate (SER), under recommended operating conditions. This hardness level is defined by the Adams 90% worst case cosmic ray environment for geosynchronous orbits. Latchup The SRAM will not latch up due to any of the above radiation exposure conditions when applied under recommended operating conditions. Fabrication with the SOI substrate material provides oxide isolation between adjacent PMOS and NMOS transistors and eliminates any potential SCR latchup structures. Sufficient transistor body tie connections to the p- and n-channel substrates are made to ensure no source/drain snapback occurs.
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HX6408 Advanced Information
RADIATION HARDNESS RATINGS (1)
Parameter
Total Dose Transient Dose Rate Upset Transient Dose Rate Survivability
Limits (2)
3X10 1X106 10 1X10 1X10
12 5
Units
rad(SiO2) rad(Si)/s rad(Si)/s
Test Conditions
TA=25C Pulse width 50 ns VDD>3.6V, TA=25C Pulse width 50 ns, Xray,VDD=3.6V, TA=25C TA= 85C, Adams 90% worst case environment 1MeV equivalent energy, Unbiased, TA=25C
Soft Error Rate Neutron Fluence
<1X10-10 1X1014
Upsets/bit-day N/cm2
(1) (2)
Device will not latch up due to any of the specified radiation exposure conditions. o o Operating conditions (unless otherwise specified): VDD=3.0V to 3.6V, TA=-55 C to 125 C
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VDD VPIN TSTORE TSOLDER PD IOUT VPROT JC TJ
(1) (2) (3) (4)
Parameter Min
Supply Voltage Range (2) Voltage on Any Pin (2) Storage Temperature (Zero Bias) Soldering Temperature (5 seconds) Maximum Power Dissipation (3) DC or Average Output Current EST Input Protection Voltage (4) Thermal Resistance (Jct-to-Case) Junction Temperature -0.5 -0.5 -65
Rating Max
4.6 VDD+0.5 150 270 2.5 25 2 175
Units
V V C C W mA V C/W C
2000 36 Pin FP
Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability. Voltage referenced to VSS. RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification. Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DSEC certified lab.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD TA VPIN VDDRAMP
Parameter Min
Supply Voltage (referenced to VSS) Ambient Temperature Voltage on Any Pin (referenced to VSS) VDD Turn on ramp time 3.0 -55 -0.3
Description Typ Max
3.3 25 3.6 125 VDD+0.3 50
Units
V C V ms
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HX6408 Advanced Information
DC ELECTRICAL CHARACTERISTICS
Symbol
IDDSB
Parameter
Static Supply Current TA=25C TA=125C Static Supply Current Deselected Dynamic Supply Current, Selected (Write) 1 MHz 2 MHz 10 MHz 25 MHz 40 MHz Dynamic Supply Current, Selected (Read) 1 MHz 2 MHz 10 MHz 25 MHz 40 MHz Dynamic Supply Current, Deselected Dynamic Supply Current, Sleep Input Leakage Current Output Leakage Current Low-Level Input Voltage High-Level Input Voltage Low-Level Output Voltage High-Level Output Voltage
Worst Case (1) Min Max
5 10 24
Units
Test Conditions
mA mA
IDDOP3 IDDOPW
VDD=max, Iout=0mA, Inputs Stable VDD=max, Iout=0mA, f=fmax, NSL=NCS=VIH (2)
9 18 89 160 260
mA/MHz
VDD=max, Iout=0mA, NSL=VIH, NCS=VIL (1)
IDDOPR
IDDOP1 IDDOP2 II IOZ VIL VIH VOL VOH
(1) (2)
4 8 40 100 160 1.5 0.2 -5 -10 5 10 0.3xVDD 0.7xVDD 0.4 2.7
mA/MHz
VDD=max, Iout=0mA, NSL=VIH, NCS=VIL (1)
mA mA A A V V V V
VDD=max, Iout=0mA, f=1MHz, NSL=VIH (2) VDD=max, Iout=0mA, f=1MHz, NSL=VIL (2) Vss VI VDD Vss VIO VDD output = high Z VDD=3.0V VDD=3.6V VDD=3.0V, IOL = 8mA VDD=3.0V, IOH = 4mA
Worst case operating conditions: VDD=3.0V to 3.6V, -55C to +125C, post total dose at 25C. All inputs switching. DC average current.
CAPACITANCE (1)
Symbol
CI CO
Parameter
Input Capacitance Output Capacitance
Worst Case (1) Min Max
9 8
Units
pF pF
Test Conditions
VI=VDD or VSS, f=1 MHz VIO=VDD or VSS, f=1 MHz
(1) This parameter is tested during initial design characterization only.
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HX6408 Advanced Information
DATA RETENTION CHARACTERISTICS
Symbol
VDR IDR
Parameter
Data Retention Voltage Data Retention Current
Typical (1)
Worst Case (2) Min Max
2.0 3
Units
V mA
Test Conditions
NCS=VDR VI=VDR or VSS NCS=VDD=VDR VI=VRD or VSS
(1) Typical operating conditions: TA=25C, pre-radiation. (2) Worst case operating conditions: TA=-55C to +125C, post dose at 25C
TESTER EQUIVALENT LOAD CIRCUIT
1.9V V1 DUT Output 249 V2 Valid High Output Valid Low Output
CL < 50 pf *
* CL = 5pf for TWQZ, TSHQZ, TPLQZ, and TGHQZ
Tester AC Timing Characteristics
Input Levels *
VDD VSS
* Input rise and fall times <5 ns.
Output Sense Levels
VDD - 0.4V High Z = VDD/2 0.4V (VDD/2) + 0.2V High Z (VDD/2) - 0.2V
VDD/2
High Z
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HX6408 Advanced Information
ASYCHRONOUS READ CYCLE AC TIMING CHARACTERISTICS (1)
Worst Case (3) -55 to 125C Min Max
20 25 20 25 3 300KRad 1MRad 4 8 25 5 10 5 0 5 20 25
Symbol
TAVAVR TAVQV TAXQX TSLQV TSLQX TSHQZ TPHQV TPHQX TPLQZ TGLQV TGLQX TGHQZ
(1) (2) (3)
Parameter
Address Read Cycle Time Address Access Time Address Change to Output Invalid Time Chip Select Access Time Chip Select Output Enable Time Chip Select Output Disable Time Sleep Enable Access Time Sleep Enable Output Enable Time Sleep Enable Output Disable Time Output Enable Access Time Output Enable Output Enable Time Output Enable Output Disable Time 300KRad 1MRad 300KRad 1MRad
Typical (2)
Units
ns ns ns ns ns ns ns ns ns ns ns ns
Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading CL50 pF, or equivalent capacitive output loading CL=5 pF for TSHQZ, TPLQZ TGHQZ. For CL>50 pF, derate access times by 0.02 ns/pF (typical). Typical operating conditions: VDD=3.3V, TA=25C, pre-radiation. Worst case operating conditions: VDD=3.0V to 3.6V, TA=-55C to 125C, post total dose 25C at
TAVAVR
ADDRESS
TAVQV TSLQV
NCS
TAXQX
TSLQX
DATA OUT HIGH IMPEDANCE DATA VALID
TSHQZ
TPHQX TPHQV
NSL
TPLQZ
TGLQX TGLQV
TGHQZ
NOE
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HX6408 Advanced Information
ASYNCHRONOUS WRITE CYCLE AC TIMING CHARACTERISTICS (1)
Symbol
TAVAVW TWLWH TSLWH TDVWH TAVWH TWHDX TAVWL TWHAX TWLQZ TWHQX TWHWL
(1) (2) (3) (4) (5)
Parameter
Write Cycle Time (4) Write Enable Write Pulse Width Chip Select to End of Write Time Data Valid to End of Write Time Address Valid to End of Write Time 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad
Typical (2)
Worst Case (3) -55 to 125C Min Max
20 25 15 20 16 20 12 15 20 25 0 0 0 7 4 5
Units
ns ns ns ns ns ns ns ns ns ns ns
Data Hold after End of Write Time Address Valid Setup to Start of Write Time Address Valid Hold after End of Write Time Write Enable to Output Disable Time Write Disable to Output Enable Time Write Disable to Write Enable Pulse Width (5)
Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading 50 pF, or equivalent capacitive load 5 pF for TWLQZ. Typical operating conditions: VDD=3.3V, TA=25C, pre-radiation. Worst case operating conditions: VDD=3.0V to 3.6V, -55C to 125C, post total dose 25C TAVAVW = TWLWH + TWHWL Guaranteed but not tested
TAVAVW
ADDRESS
TAVWH TAVWL TWHWL
NWE
TWHAX
TWLWH
TWLQZ
DATA OUT HIGH IMPEDANCE
TWHQX
TDVWH
DATA IN DATA VALID
TWHDX
TSLWH
NCS
TPHWH
NSL
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HX6408 Advanced Information
DYNAMIC ELECTRICAL CHARACTERISTICS
Asynchronous Operation The RAM is asynchronous in operation. Read and Write cycles are controlled by NWE, NCS, NSL, and Address signals. Read Operation To perform a valid read operation, both chip select and output enable (NOE) must be low and not sleep (NSL) and write enable (NWE) must be high. The output drivers can be controlled independently by the NOE signal. To perform consecutive read operations, NCS is required to be held continuously low, NSL held continuously high, and the toggling of the addresses will start the new read cycle. It is important to have the address bus free of noise and glitches, which can cause inadvertent read operations. The control and address signals should have rising and falling edges that are fast (<5 ns) and have good signal integrity (free of noise, ringing or steps associated reflections). For an address activated read cycle, NCS and NSL must be valid prior to or coincident with the address edge transition(s). Any amount of toggling or skew between address edge transitions is permissible; however, data outputs will become valid TAVQV time following the latest occurring address edge transition. The minimum address activated read cycle time is TAVAV. When the RAM is operated at the minimum address activated read cycle time, the data outputs will remain valid on the RAM I/O until TAXQX time following the next sequential address transition. To control a read cycle with NCS, all addresses and NSL must be valid prior to or coincident with the enabling NCS edge transition. Address or NSL edge transitions can occur later than the specified setup times to NCS; however, the valid data access time will be delayed. Any address edge transition, which occurs during the time when NCS is low, will initiate a new read access, and data outputs will not become valid until TAVQV time following the address edge transition. Data outputs will enter a high impedance state TSHQZ time following a disabling NCS edge transition. To control a read cycle with NSL, all addresses and NCS must be valid prior to or coincident with the enabling NSL edge transition. Address or NCS edge transitions can occur later than the specified setup times to NSL; however, the valid data access time will be delayed. Any address edge transition, which occurs during the time when NSL is high will initiate a new read access, and data outputs will not become valid until TAVQV time following the address edge transition. Data outputs will enter a high impedance state TPLQZ time following a disabling NSL edge transition. Write Operation To perform a write operation, both NWE and NCS must be low, and NSL must be high. Consecutive write cycles can be performed by toggling one of the control signals while the other remains in their "write" state (NWE or NCS held continuously low, or NSL held continuously high). At least one of the control signals must transition to the opposite state between consecutive write operations. The write mode can be controlled via three different control signals: NWE, NCS, and NSL. All three modes of control are similar, except the NCS and NSL controlled modes actually disable the RAM during the write recovery pulse. NSL fully disables the RAM decode logic and input buffers for power savings. Only the NWE controlled mode is shown in the table and diagram on the previous page for simplicity; however, each mode of control provides the same write cycle timing characteristics. Thus, some of the parameter names referenced below are not shown in the write cycle table or diagram, but indicate which control pin is in control as it switches high or low. To write data into the RAM, NWE and NCS must be held low and NSL must be held high for at least WLWH/TSLSH/TPHPH time. Any amount of edge skew between the signals can be tolerated, and any one of the control signals can initiate or terminate the write operation. The DATA IN must be valid TDVWH time prior to switching high. For consecutive write operations, write pulses (NWE) must be separated by the minimum specified WHWL/TSHSL/TPLPL time. Address inputs must be valid at least TAVWL/TAVSL/TAVPH time before the enabling NWE/NCS/NSL edge transition, and must remain valid during the entire write time. A valid data overlap of write pulse width time of TDVWH/TDVSH/ TDVPL, and an address valid to end of write time of TAVWH/TAVSH/TAVPL also must be provided for during the write operation. Hold times for address inputs and data inputs with respect to the disabling NWE/NCS/NSL edge transition must be a minimum of TWHAX/TSHAX/TPLPX time and TWHDX/TSHDX
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HX6408 Advanced Information /TPLDX time, respectively. The minimum write cycle time is TAVAV.
QUALITY AND RADIATION HARDNESS ASSURANCE
Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a complete "Total Quality Assurance System," a computer data base process performance tracking system and a radiation-hardness assurance strategy. The radiation hardness assurance strategy starts with a technology that is resistant to the effects of radiation. Radiation hardness is assured on every wafer by irradiating test structures as well as SRAM product, and then monitoring key parameters, which are sensitive to ionizing radiation. Conventional MILSTD-883 TM 5005 Group E testing, which includes total dose exposure with Cobalt 60, may also be performed as required. This Total Quality approach ensures our customers of a reliable product. It starts with process development and continuing through product qualification and screening. need to create detailed specifications and offer benefits of improved quality and cost savings through standardization.
RELIABILITY
Honeywell understands the stringent reliability requirements for space and defense systems and has extensive experience in reliability testing on programs of this nature. This experience is derived from comprehensive testing of VLSI processes. Reliability attributes of the RICMOSTM SOI process were characterized by testing specially designed irradiated and non-irradiated test structures from which specific failure mechanisms were evaluated. These specific mechanisms included, but were not limited to, hot carriers, electromigration and time dependent dielectric breakdown. This data was then used to make changes to the design models and process to ensure more reliable products. In addition, the reliability of the RICMOSTM SOI process and product in a military environment is monitored by testing irradiated and non-irradiated circuits in accelerated dynamic life test conditions. Packages were qualified for product use after undergoing Groups B & D testing as outlined in MIL-STD-883, TM 5005, Class S. Quality conformance testing is performed as an option on all production lots to ensure the ongoing reliability of the product.
SCREENING LEVELS
Honeywell offers several levels of device screening to meet your system needs. "Engineering Devices" are available with limited performance and screening for operational evaluation testing. Hi-Rel Level B and S devices undergo additional screening per the requirements of MILSTD-883. As a QML supplier, Honeywell also offers QML Class Q and V devices per MIL-PRF-38535 and are available per the applicable Standard Microcircuit Drawing (SMD). QML devices offer ease of procurement by eliminating the
PACKAGING
The 512K x 8 SRAM is offered in a commercially compatible 36-lead flat pack. This package is constructed of multi-layer ceramic (Al2O3) and contains internal power and ground planes. Parentheses denote pin options. These pins are available as NC to conform to commercial standards. All NC (no connect) pins should be connected to VSS to prevent charge build up in the radiation environment.
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HX6408 Advanced Information
PACKAGE OUTLINE
COMMON DIMENSIONS SYM A A1 B C D E E1 L Q MIN. .102 .085 .016 .004 .910 .045 .832 --------NOM. .113 .095 .018 .006 .920 .050 .840 .450 .104 MAX. .125 .105 .020 .008 .930 .055 .848 ---------
ORDERING INFORMATION (1) H X 6408
PART NUMBER PROCESS
X = SOI
X
S
SCREEN LEVEL
V = QML Class V Equivalent (4) Q = QML Class Q Equivalent (4) S = Level S E = Eng. Model (2)
H
N
MODE (3)
N = Non-Sleep Mode M = Sleep Mode
Source
H = Honeywell
PACKAGE DESIGNATION
X = 36 Lead FP K = Known Good Die - = Bare Die (no package)
TOTAL DOSE HARDNESS
R = 1x10 rad (SiO2) 5 F = 3x10 rad (SiO2) 6 H = 1x10 rad (SiO2) N = No Level Guaranteed (2)
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(1) Orders may be faxed to 763-954-2051. Please contact our Customer Service Representative at 763-954-2888 for further information. (2) Engineering Device Description: Parameters are tested -55C to 125C, 24 hour burn-in, IDDSB = 10 mA, no radiation Guaranteed. (3) With the Non-Sleep Mode option, Pin 36 is a no-connect (NC), and is not wirebonded to the chip. With the Sleep Mode, Pin 36 has the NSL function. (4) These devices are screened to QML levels but are not QML certified.
For more information about Honeywell's family of radiation hardened integrated circuit products and services, visit www.myspaceparts.com.
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Honeywell International Inc. Aerospace Electronics Systems Defense & Space Electronics Systems 12001 Highway 55 Plymouth, MN 55441 11 www.honeywell.com 1-800-323-8295
Form #900918 June 2005 (c)2005 Honeywell International Inc.

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